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The main process of plasma enhanced chemical vapor deposition

Many friends have asked about the basic principles of plasma-enhanced chemical vapor deposition (PECVD). Today we will share with you.
Chemical Vapor Deposition (PECVD)
    Plasma-enhanced chemical vapor deposition (PECVD) technology is a new preparation technology that uses glow discharge plasma to chemically react gaseous substances containing thin films to achieve growth of thin film materials. Because the PECVD technology prepares thin films by gas discharge, it effectively utilizes the reaction characteristics of non-equilibrium plasma, and fundamentally changes the energy supply mode of the reaction system. Generally speaking, when using PECVD technology to prepare thin film materials, the growth of the thin film mainly includes the following three basic processes:

   First of all, in the non-equilibrium plasma, the primary reaction between electrons and the reactive gas causes the reactive gas to decompose to form a mixture of ions and reactive groups;

   Second, various active groups diffuse and transport to the film growth surface and the tube wall, and at the same time secondary reactions between the reactants occur;

   Finally, the various primary and secondary reaction products that reach the growth surface are adsorbed and reacted with the surface, accompanied by the re-release of gas phase molecules.