High-temperature rotary tube furnaces help a materials company in Henan Province purify high-purity metals for semiconductor applications.

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High-temperature rotary tube furnaces help a materials company in Henan Province purify high-purity metals for semiconductor applications.

1. Customer Introduction

Customer Name: Henan-based Materials Co., Ltd. (A leading domestic supplier of high-purity metal materials)

Industry: Semiconductor materials, high-purity metals and sputtering target manufacturing

Core Needs: High-temperature purification of semiconductor-grade high-purity metals (such as high-purity copper, high-purity aluminum, high-purity nickel, and high-purity silver) to remove trace impurities, improve purity, and meet the requirements of high-end applications such as sputtering targets and evaporation coating.

This customer is a national-level specialized and innovative "Little Giant" enterprise, providing ultra-high-purity metal materials to the semiconductor chip, flat panel display, solar photovoltaic, and high-end optical coating industries for a long time. Traditional zone melting purification or static vacuum annealing is no longer sufficient to balance production capacity and purity. The customer urgently needs a high-temperature tubular purification device that can enhance mass transfer and impurity volatilization through rotation under dynamic atmosphere or vacuum conditions to efficiently remove low-melting-point impurities and gaseous impurities.

2. Equipment Introduction

Equipment Name: High-Temperature Rotary Tube Furnace

Model: PT-TX1400-S150LK3WQ
Operating Temperature: ≤1300℃ (Common Purification Temperature: 800～1250℃)

Tube Material: High-purity corundum tube (Al₂O₃, 99.7%) or recrystallized silicon carbide tube, high temperature resistant and corrosion resistant.

Heating Zone Length: Customizable (Typical value: 300～600mm for a single temperature zone, or multiple temperature zones).

Tube Rotation Function: The furnace tube can rotate in both directions (0～30 rpm adjustable), and the tilt angle is adjustable (±15°), facilitating material tumbling, uniform heating, and release of impurity gases.

Atmosphere Control: Sealed flange system, capable of vacuuming (vacuum degree ≤1×10⁻³ Pa) or introducing high-purity Ar, N₂, H₂/Ar mixtures, etc., for protective/reducing atmospheres.

Heating Element: High-quality silicon carbide rod or molybdenum-containing resistance wire, fast heating rate (recommended ≤20℃/min). Temperature Control System: PID+SCR control, multi-segment programmed heating, temperature control accuracy ±1℃, over-temperature alarm protection.

Insulation Material: High-purity alumina polycrystalline fiber, low heat capacity, significant energy-saving effect.

Safety Features: Furnace tube overpressure relief, rotational overload protection, atmosphere underpressure alarm, electrical overcurrent protection.

This high-temperature rotary tube furnace is specifically designed for vacuum/atmosphere purification of powdered, granular, or small blocky metal materials. Through the rotating furnace tube, the material is continuously agitated, increasing the surface area for contact with the atmosphere/vacuum, promoting the volatilization and removal of low-melting-point impurities (such as Cd, Zn, Pb, Bi, etc.) and gaseous impurities (H₂, O₂, N₂, etc.), thereby achieving a stepwise increase in metal purity.

3. Equipment Application

Specific Process: Purification of high-purity metals for semiconductors

Processed Materials:

High-purity copper (Cu, 5N → 6N/6N+)
High-purity aluminum (Al, 5N5 → 6N)
High-purity nickel (Ni, 5N → 6N)
High-purity silver (Ag, 5N → 6N)

Purification Principle: Heating to a specific temperature under vacuum or reducing atmosphere utilizes the difference in saturated vapor pressure between impurity elements and the main metal, causing impurities to preferentially volatilize and be removed by the vacuum system or carried away by the protective gas flow. Simultaneously, the rotating furnace tube continuously renews the material surface, breaking down the diffusion boundary layer and significantly improving the impurity removal rate.

Capacity Increase: 3-5 kg of metal particles can be processed per batch, greatly shortening the purification time compared to static vacuum annealing.

Consistency: Batch-to-batch purity fluctuation ≤ ±0.00005%, meeting the stringent incoming material inspection standards for semiconductor materials.

4. Customer Feedback

"High-purity metal purification has always been a core bottleneck in our production process. Traditional static vacuum furnaces, when processing powders or granules, suffer from low efficiency and long processing times due to limited impurity volatilization caused by surface diffusion. After introducing this high-temperature rotary tube furnace, the rotating mechanism allows the material to continuously tumble within the furnace tubes, resulting in noticeable impurity enrichment at the cold end of the tubes after each purification. For example, with high-purity copper, we previously needed 12 hours of static vacuum annealing to barely achieve 5N8; now, 8 hours of rotary purification directly and stably achieves over 6N8, with key impurities such as lead, bismuth, and cadmium all reduced to below 0.1 ppm. The furnace's vacuum level remains consistently stable, and the sealing rings and rotary dynamic seal design are highly reliable, with no leaks after two months of continuous operation. Furthermore, the corundum tubes have not deformed or cracked even after long-term use at 1300℃. This equipment has become standard equipment in our semiconductor-grade metal purification process, and we plan to purchase two more units to expand our production capacity."

— Technical Director, a materials company in Henan

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