Detailed Parameters Of The Product
Description:
RTP (Rapid Thermal Processing) is a method of heating the entire silicon wafer to a humidity range of 400 ~ 1100 ℃ in a very short time. Compared with furnace annealing, it has less thermal budget and impurities in silicon wafer Less, less stain and short processing time.
Technical Parameters:
Furnace
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Type
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RTP Tube furnace
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Display
|
LED
|
Max.temperature
|
1200℃
|
Heating rate
|
25℃/S
|
Temperature accuracy
|
±50℃
|
Tube Diameter(OD)
|
Ø100mm
|
Tube length
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600mm
|
Heat zone length
|
220mm
|
Heating element
|
Halogen light
|
Tube Material
|
Quartz
|
Chamber materials
|
alumina fiber
|
Thermal couple
|
K type
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Max.power
|
30KW
|
Working voltage
|
AC 380V 50HZ three phase
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Temperature control
|
PID automatic control via SCR power control
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Heating curves
|
30 steps programmable
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Warranty
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One year limited manufacturer's warranty (Consumable parts such as processing tubes, O-rings and heating elements are not covered by the warranty, please order replacements at related products below).
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