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model:PT-T1200PECVD

1200 PECVD Systems

Application

Detailed Parameters Of The Product

product description:
This product is composed of RF power supply, gas proton flow control system, substrate temperature control system, and vacuum system. It is suitable for deposition of SiO2 and SiNx films from room temperature to 1200 °C, and can also realize TEOS source deposition and SiC film deposition. And liquid gas source deposition of other materials, especially suitable for the deposition of high-efficiency protective layer films on organic materials and non-damaged passivation films at specific temperatures.

1.1200℃ Tube Furnace Series:

Power	KW	8
Outer shell	Stainless steel
Inner lining	Two layers of Alumina fiber
Heating element	Resistance wire
Power supply	V	AC 208-240V, Single Phase, 50/60 Hz
Max. Temperature	°C	1200 (2 hour)
Working Temperature	°C	1100 (Continuous)
Temperature Uniform	°C	±1
Max Heating & Cooling rate	°C/S	≤15 (Suggestion)
Tube Size	mm	Φ200×1400
Tube material	High quality quartz
Heating zone size	mm	Φ250×300
Constant Temp. zone Length	mm	180
Sealing	Flanges
Temp. Control	30 programmable segments for precise control of heating rate, cooling rate and dwell time. Built-in PID Auto-Tune function with overheating & broken thermocouple protection. Over temperature protection and alarm allows for operation without attendant(s). +/- 1 ºC temperature accuracy.
Accuracy	°C	±1
Total weight	Kg	100

2.600W Plasma RF Power supply

Plasma RF Power supply	Output Power	5 -600W adjustable with ± 1% stability
	RF frequency	13.56 MHz ±0.005% stability
	Reflection Power	200W max.
	Matching	Automatic
	RF Output Port	50 Ω, N-type, female
	Noise	<50 dB.
	Cooling	Air cooling.
	Power	220V, 50Hz