model:PT-T1200PECVD
1200 PECVD Systems
Application: This product is composed of RF power supply, gas proton flow control system, substrate temperature control system, and vacuum system. It is suitable for deposition of SiO2 and SiNx films from room temperature to 1200 °C, and can also realize TEOS source deposition and SiC film deposition. And liquid gas source deposition of other materials, especially suitable for the deposition of high-efficiency protective layer films on organic materials and non-damaged passivation films at specific temperatures.
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Detailed Parameters Of The Product
product description:
This product is composed of RF power supply, gas proton flow control system, substrate temperature control system, and vacuum system. It is suitable for deposition of SiO2 and SiNx films from room temperature to 1200 °C, and can also realize TEOS source deposition and SiC film deposition. And liquid gas source deposition of other materials, especially suitable for the deposition of high-efficiency protective layer films on organic materials and non-damaged passivation films at specific temperatures.
1.1200℃ Tube Furnace Series:
Power |
KW |
8 |
Outer shell |
Stainless steel |
Inner lining |
Two layers of Alumina fiber |
Heating element |
Resistance wire |
Power supply |
V |
AC 208-240V, Single Phase, 50/60 Hz |
Max. Temperature |
°C |
1200 (2 hour) |
Working Temperature |
°C |
1100 (Continuous) |
Temperature Uniform |
°C |
±1 |
Max Heating & Cooling rate |
°C/S |
≤15 (Suggestion) |
Tube Size |
mm |
Φ200×1400 |
Tube material |
High quality quartz |
Heating zone size |
mm |
Φ250×300 |
Constant Temp. zone Length |
mm |
180 |
Sealing |
Flanges |
Temp. Control |
30 programmable segments for precise control of heating rate, cooling rate and dwell time. Built-in PID Auto-Tune function with overheating & broken thermocouple protection. Over temperature protection and alarm allows for operation without attendant(s). +/- 1 ºC temperature accuracy. |
Accuracy |
°C |
±1 |
Total weight |
Kg |
100 |
2.600W Plasma RF Power supply
Plasma RF Power supply |
Output Power |
5 -600W adjustable with ± 1% stability |
RF frequency |
13.56 MHz ±0.005% stability |
Reflection Power |
200W max. |
Matching |
Automatic |
RF Output Port |
50 Ω, N-type, female |
Noise |
<50 dB. |
Cooling |
Air cooling. |
Power |
220V, 50Hz |