model:PT-PECVD-1200-50*300-F3
PECVD system
Application: Wide temperature range; long sputtering area; adjustable tube; exquisite and compact, cost-effective, can achieve rapid temperature rise and fall, is an ideal choice for laboratory growth of thin film graphene, metal thin film, ceramic thin film, composite thin film, etc. Extended plasma clean etch use.
Contact us for customize
send-email:
info@lab-furnace.com
Detailed Parameters Of The Product
product description:
The PECVD system uses radio frequency to ionize the gas containing the atoms constituting the film to form a plasma locally, and the plasma is chemically active and easily reacts to deposit the desired film on the substrate.
Product Usage:
Wide temperature range; long sputtering area; adjustable tube; exquisite and compact, cost-effective, can achieve rapid temperature rise and fall, is an ideal choice for laboratory growth of thin film graphene, metal thin film, ceramic thin film, composite thin film, etc. Extended plasma clean etch use.
Product Specs
Model |
PT-PECVD-1200-50*300-F3 |
Heating system |
Display |
LED |
Limit Temperature |
1200℃ |
Continuous Working Temp. |
≤1100℃ |
Heating Rate |
Suggestion: 0~15℃/min (max. 20℃/min) |
Temperature Zone |
300mm |
Heating Element |
Resistance with Mo |
Thermocouple |
K type |
Temperature Control Accuracy |
±1℃ |
Tube Size |
60 x 1200mm |
Material: alumina |
Temperature Control |
PID automatic control via SCR power control |
Heating process |
30 steps programmable |
Power source |
220V, 50 Hz, single phase at max. 3KW |
Max working pressure |
0.02MPa |
Vacuum System |
Rotary vane pump Include KF25 Adpater, bellow for vacuum pump group and mobile cabinet with wheels. |
Ultimate vacuum 10Pa under cold state. |
Vacuum gauge |
Inficon digital vacuum gauge |
Vacuum Flange |
Stainless Steel vacuum flange with valves and needles |
Mass Flow meters |
Flow scope |
CO2 (flow range: 0-200 sccm CH4 (flow range: 0-200 sccm) N2 the flow range (flow range: 0-200 sccm) |
Accuracy |
±1.5 % F.S. |
Repeat accuracy |
±1.5 % F.S. |
Response time |
≦10sec |
Working pressure difference range |
0.1~0.5MPa |
Pressure resistance |
3MPa |
Temperature Coefficient |
Zero: ≤±0.2% F.S./℃; Span: ≤±0.2% F.S./℃ |
Working environment temperature |
5~45℃ |
Input signal |
0 V ~ +5.00 V |
Output signal |
0 V ~ +5.00 V |
|
Electric plug form |
DB15 pin(Female) |
|
Power |
+15 V 50 mA -15V 200 mA |
Plasma RF Generator |
Output Power: 0 -300W adjustable with ± 1% stability RF frequency: 13.56 MHz ±0.005% stability Reflection Power: 120W max. Power stability index: ± 0.1% Matching: Automatic Noise: <50 dB. Whole efficiency:≧70% |