Zhengzhou Protech
Zhengzhou Protech
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PECVD system for graphene growth

PECVD system for graphene growth

    Application:  Widely used to deposit high-quality SiO2 film, Si3N4 film, diamond film, hard film, optical film and carbon nanotube (CNT), etc.
Contact us for customize send-email: info@lab-furnace.com
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Detailed Parameters Of The Product

PECVD system Graphene Growth Furnace is widely used for various CVD experimental reaction temperature at 1600 ℃, it can also be used for vacuum sintering,vacuum protective atmosphere sintering nanomaterials preparation,battery materials preparation and other research field.

Outstanding features of Graphene Growth Furnace :
1.Enclosed tube furnace 
2.To be input inert gas, hydrocarbon gas,hydrogen.
3.Max. Temperature 1700C

We have a wide range of different optional function furnace to meet different heating requirement, also we accept customer design furnace R&D working, please email us your specific requirement, we will recommend most reasonable choice for you, thanks!

Technical parameters of Graphene Growth Furnace :
Model PT-1700CVD
Control system Intelligent temperature control system
Display mode Touch screen
Limiting  temperature 1700℃
Working temperature  ≤1650℃
Heating rate ≤20℃(suggestion:10℃/min)
Temperature control ±1℃
Heating element MoSi2
Heating zone Single
Heating zone length 300mm
Furnace tube material High purity alundum tube
furnace tube diameter 80mm
The furnace tube length 1000mm
Gas tightness Vacuum flange and corundum furnace tube up to 4.03×10-3Pa
Control mode PID Temperature control
Thermal Couple B Type
Power supply 110-480V 50Hz-60Hz
Total power 3KW
The flow meter Mass Flow meters
Pneumatic pressure -0.1~0.15 MPa
Warranty 12 month (exclusive wearing part)

PECVD system
CVD furnace can be customized according to customers’requirements.


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